III-V semiconductors; MOCVD; aluminium compounds; field emission electron microscopy; gallium arsenide; indium compounds; nanowires; photoluminescence; scanning electron microscopy; semiconductor growth; semiconductor heterojunctions; semiconductor quantum wires; tr;
机译:AlGaAs缓冲层在Si衬底上生长掺锌GaAs / AlGaAs异质结构纳米线
机译:基于AlGaAs / InGaAs / AlGaAs和两侧掺杂的PHEMT异质结构的电学和结构性能
机译:GaAs-AlGaAs和应变层InGaAs-GaAs-AlGaAs梯度折射率分离禁区异质结构单量子阱激光器的光学和微波性能
机译:GaAs,IngaAs和Algaas纳米线和纳米线异质结构的生长,结构和光学性质
机译:GaAsSb纳米线的生长速率,电学和光学性质建模
机译:线槽纳米腔增强InGaAs / GaAs量子点/纳米线异质结构的单光子发射速率
机译:GaAs / AlGaAs核壳纳米线的位置控制生长-结构和光学性能更均匀吗?