Application of laser-induced microwave photoconductivity in diagnostics of semiconductor surface layers

摘要

Abstract: The potentials of laser-induced microwavephotoconductivity (LMP) as a diagnostic method forsemiconductor surface studies are considered in thispaper. The principals and practical realization aspectsincluding a block-diagram and technical characteristicsof the LMP apparatus, and some experimental data onelectron-recombination properties of Si and GaAssurfaces are presented. The data include investigationof non equilibrium carrier relaxation channels andrates, influence of various defects (traps, adhesioncenters, dislocations etc.), and spatial variations ofthese relaxation characteristics in surface layersmodified with different procedures (ion implantation,laser annealing, mechanical treatment). Among theremote action of surface modification and interactionof locally modified zones. These effects are shown tobe very important in the physics and technology ofsemiconductor surface modification. It is concludedthat the LMP method is very informative diagnostic toolfor testing and studying of semiconductor surfaces anddevice structures used in microelectronics, powerelectronics and optoelectronics.!7