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High aspect ratio of near-field nano-lens for deep nano-crater patterning

机译:高深宽比的近场纳米透镜,用于深纳米坑口图案化

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Enhanced optical field close to nano-dielectric spheres excited by a femtosecond laser enables high-throughput nano-crater patterning. With spheres larger than the incident wavelength, the focused far field is well known in optics to be governed by micro-lens, while the enhanced near field with spheres smaller than or equivalent to the incident wavelength is dominated by the resonant Mie-scattering. The crater fabricated by the near-field nano-lens is much shallower than by the micro-lens. Revealing the largest crater depth relative to the diameter will advance the smart applications for nanotribology, nano-sensors and nano-biomedicine. Here, we study the aspect ratio (the depth profile in the substrate relative to the diameter of the intensity profile on the surface of the near-field intensity distribution in the substrate). It is because the fabricated nano-crater depth is empirically determined by the near-field intensity distribution. A maximal vertical intensity profile is found as a function of refractive index and sphere diameter. The dielectric spheres ranging from 400 to 1000 nm diameter on the Si substrate are studied at 800 ran wavelength. Using a sphere with the smaller refractive indices, the larger aspect ratio is achieved. However, a maximal optical intensity is sacrificed for the high aspect ratio. Largest aspect ratios for the near-field nano-patterning range from 3.0 through 4.2 using available spheres with refractive indices of from 1.4 to 3.0. We also consider the difference of the enhanced optical intensity distribution between the systems consists of a single isolated dielectric sphere on a silicon substrate and that consisting of mono-layered hexagonal dielectric sphere array on a silicon substrate.
机译:飞秒激光激发的接近纳米电介质球的增强的光场可以实现高通量的纳米坑图案化。对于大于入射波长的球体,聚焦远场在光学领域众所周知是由微透镜控制的,而小于或等于入射波长的球体的增强近场则由共振米氏散射控制。由近场纳米透镜制造的弹坑比由微透镜制造的弹坑浅得多。揭示相对于直径的最大火山口深度将推动纳米摩擦学,纳米传感器和纳米生物医学的智能应用。在这里,我们研究纵横比(基板中的深度分布相对于基板中近场强度分布表面上的强度分布的直径)。这是因为制造的纳米坑深度由经验决定于近场强度分布。发现最大垂直强度分布是折射率和球体直径的函数。在800纳米波长下研究了硅衬底上直径范围为400至1000 nm的介电球。使用折射率较小的球体,可以实现较大的纵横比。但是,高纵横比会牺牲最大的光学强度。使用折射率为1.4到3.0的可用球体,近场纳米图案的最大长宽比为3.0到4.2。我们还考虑了系统之间增强的光强度分布的差异,该差异由硅衬底上的单个隔离介电球和硅衬底上的单层六角形介电球阵列组成。

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