Growth mechanism of epitaxial NiSi2 in atomic-scale for Schottky source/drain in Silicon Nanowire transistors

摘要

Silicon nanowire (SNW) field effect transistors (FET) which consist of silicon nanowire channels with less than 10 nm diameters and gate-all-around structures are targeted as future CMOS devices. This paper presents the atomic-scale understanding of epitaxial NiSi₂ growth and discusses its contribution to silicidation of SNWs.