Thermally Assisted Photoemission for CMOS Device Analysis

摘要

Enhancement of Existing Fault Isolation Techniques for CMOS VLSI Failure Analysis is important in keeping pace with device design and process technologies. Recently, we enhanced our photoemission microscopy capability by applying heat to the device during analysis. This provided greater defect related light emission from nSRAM test structures and allowed identification of subtle failure modes not observable during room temperature inspection.