Institute of Microelectronics,Peking University,Beijing 100871,P. R. China;
Institute of Microelectronics,Peking University,Beijing 100871,P. R. China;
Institute of Microelectronics,Peking University,Beijing 100871,P. R. China;
Institute of Microelectronics,Peking University,Beijing 100871,P. R. China;
Institute of Microelectronics,Peking University,Beijing 100871,P. R. China;
Institute of Microelectronics,Peking University,Beijing 100871,P. R. China;
Institute of Microelectronics,Peking University,Beijing 100871,P. R. China;
Institute of Microelectronics,Peking University,Beijing 100871,P. R. China;
Institute of Microelectronics,Peking University,Beijing 100871,P. R. China;
Institute of Microelectronics,Peking University,Beijing 100871,P. R. China;
机译:体衬底上构建的硅纳米线栅极全能无结晶体管的研究
机译:全方位门(GAA)通道结构制造的多晶硅Si纳米线SONOS非易失性存储单元
机译:在体硅衬底上采用后沟道工艺的全能栅极硅纳米线晶体管
机译:对散装硅纳米线SONOS存储器在散装Si衬底上制造的寄生底晶体管的影响的研究
机译:一维硅纳米线的细胞响应以及在纳米线生长之前用氢氟酸蚀刻硅(111)基板的效果。
机译:具有全方位纳米栅极的垂直硅纳米线场效应晶体管
机译:硅纳米线栅极全场效应晶体管低频漏电流模型分析