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Analysis of Low Frequency Drain Current Model for Silicon Nanowire Gate-All-Around Field Effect Transistor

机译：硅纳米线栅极全场效应晶体管低频漏电流模型分析

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作者
Awanit Sharma;
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年度 2015
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1. Width dependence of drain current and carrier mobility in gate-all-around multi-channel polycrystalline silicon nanowire transistors with 10nm width scale [J] . Jang Ki-Hyun, Saraya Takuya, Kobayashi Masaharu, Japanese journal of applied physics . 2020,第2期

机译：具有10nm宽度尺度的栅极 - 全围多通道多通硅纳米线纳米线纳米线纳米线纳米线纳米线纳米线纳米线纳米线纳米线纳米线纳米线纳米线横向依赖性的宽度依赖性
2. Characteristics of gate-all-around silicon nanowire field effect transistors with asymmetric channel width and source/drain doping concentration [J] . Chang-Ki Baek, Sooyoung Park, Myung-Dong Ko, Journal of Applied Physics . 2012,第3期

机译：具有不对称沟道宽度和源极/漏极掺杂浓度的全栅硅纳米线场效应晶体管的特性
3. Physics-based drain current modeling of gate-all-around junctionless nanowire twin-gate transistor (JN-TGT) for digital applications [J] . Pratap Yogesh, Gautam Rajni, Haldar Subhasis, Journal of Computational Electronics . 2016,第2期

机译：用于数字应用的全能门无结纳米线双栅晶体管（JN-TGT）的基于物理的漏极电流建模
4. Modeling of transport behavior of the ballistic Silicon nanowire gate-all-around field-effect-transistors (Si NWFETs) with Si/SiO2 interface roughness [C] . Chowdhury Basudev Nag, Chattopadhyay Sanatan 2012 5th International Conference on Computers and Devices for Communication . 2012

机译：具有Si / SiO2界面粗糙度的弹道硅纳米线全栅场效应晶体管（Si NWFET）的传输行为建模
5. Electronic Transport and Low Frequency Noise Characterization in Si Nanowire and 2- dimensional MoS2 based Field-effect Transistors. [D] . Sharma, Deepak K. 2014

机译：Si纳米线和基于二维MoS2的场效应晶体管中的电子传输和低频噪声表征。
6. Degradation mechanisms in gate-all-around silicon Nanowire field effect transistor under electrostatic discharge stress – a modeling approach [O] . Cher Ming Tan, Xiangchen Chen -1

机译：静电放电应力作用下的全栅硅纳米线场效应晶体管的退化机理–一种建模方法
7. Degradation mechanisms in gate-all-around silicon Nanowire field effect transistor under electrostatic discharge stress – a modeling approach [O] . Cher Ming Tan, Xiangchen Chen 2014

机译：静电放电应力作用下的全栅硅纳米线场效应晶体管的退化机理–一种建模方法

Analysis of Low Frequency Drain Current Model for Silicon Nanowire Gate-All-Around Field Effect Transistor

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