Polycrystalline Si Nanowire SONOS Nonvolatile Memory Cell Fabricated on a Gate-All-Around (GAA) Channel Architecture

摘要

In this letter, we present SONOS nonvolatile memory device with gate-all-around polycrystalline silicon (poly-Si) nanowire channel. The SONOS memory cell with 23-nm nanowire width, fabricated using top-down CMOS process, exhibits fast programming and erasing speed as well as improved subthreshold behavior of the transistor. Both the memory and transistor characteristics are dependent on the nanowire width—smaller the width, better the performance. The good device characteristics along with simple fabrication method make the poly-Si nanowire SONOS memory a promising candidate for future system-on-panel and system-on-chip applications.