Xenon-ion-beam modifications of a-SiO_2 and Ni/a-SiO_2 layers

摘要

Modifications of a-SiO_2 silms and Ni/a-SiO_2 bilayers by irradiations with 90-350 keV Xe ions have been investigated. The effects of subsequent thermal annealings in vacuum at 298-1173 K have also been studied. The analyses were performed by means of Rutherford Backscattering Spectrometry and surface profilometry. We here report on the results of ion-beam induced surface roughening and sputtering and of the noble-gas collection curves. As to the athermal ion-beam mixing at the Ni/a-SiO_2 interface, a low mixing rate in agreement with the ballistic model was observed. Only little Xe precipitation, which would indicate the presence of end-of-rang spikes, occurs at the interface. Most effects were found to strongly depend on the implanted ion fluence. direct c 1999 Elsevier Science B.V. All rights reserved.