Pulsed laser-excited microwave photoconductivity applications to high-resolution defect diagnostics of ion- and laser-beam-modified semiconductor surface

摘要

Abstract: A novel diagnostic technique for the study ofsemiconductor surfaces based on laser induced microwavephotoconductivity detection with high spatial andtemporal resolution is described. Experimental data onnonlocal modification effects in laser producedscribing, doping, and annealing of ion implanted GaAsand Si are presented. Mechanisms of nonlocal structuraland electric properties changers under modification areanalyzed. Nonlocality phenomena are concluded to beuniversal for any strong modification procedure andvery important for microelectronics technology.!6