All-Wet Stripping of FEOL Photoresist Using Mixtures of Sulphuric Acid

摘要

Until now, resist stripping in FEOL has used a plasma-based ash process followed by a wet SPM strip and SC1 rinse in a wet bench. Preliminary data presented here demonstrate a single-wafer process that provides an effective all-wet resist strip process using an enhanced sulfuric acid mixture. Based upon initial performance data, it is expected that this all-wet approach will be a viable alternative for the removal of photoresist in FEOL when applied in a high-throughput, multi-chamber platform.