A Wet Etching Technique to Reveal Threading Dislocations in Thin Germanium Layers

摘要

We have demonstrated that a chromium containing solution (Cr~(IV)/HF/H_2O) is a suitable etchant for delineating threading dislocation in thin Ge layers. The ER is sensitive to the doping level and the degree of relaxation of the layer but is low enough for thin layer characterizatizon (100nm.min~(-1) and less). A model has been proposed to describe the kinetic of etch pit formation and growth.