Wet etching method for a single layer or multiple layer comprising Ag or Ag alloy, and etchant composition for a single layer or multiple layer comprising Ag or Ag alloy, and method for manufacturing a thin film transistor and a thin film transistor

摘要

The present invention relates to an etching method characterized in that etching is performed at specific longitudinal and transverse etch rates; An etching method characterized in that the etching is performed by swinging a spray nozzle for spraying the etching solution at a specific speed; and silver or a silver alloy comprising 40 to 60% by weight of phosphoric acid, 3 to 8% by weight of nitric acid, 5 to 20% by weight of acetic acid, 0.8 to 1.2% by weight of gluconic acid, and the balance of water with respect to the total weight of the composition. Or an etchant composition for a multilayer film; A method of manufacturing a thin film transistor; and a thin film transistor.