Control of threading dislocations in germanium on silicon using a gradient GeSi layer and planarization

摘要

(57) a first layer having a planarized surface [Abstract] semiconductor substrate (302), on the substrate, at least the first crystalline epitaxial layer of one a (304), the first layer Semiconductor structure comprising a second crystalline epitaxial layer one, and (306) at least. In another embodiment of the present invention, a semiconductor substrate, and a semiconductor structure comprising a (306, 308) slope region GeSi which are grown on the substrate is provided, in that the inclined area, and offset the tensile strain that is incorporated during the heat treatment compressive strain such as is incorporated. In still another embodiment of the present invention, a semiconductor structure comprising a first layer having a (304) semiconductor substrate, sloped region grown on the substrate is provided, and incorporated between the heat treatment in the inclined area compressive strain is incorporated to offset the tensile strain is, the first layer has a surface having a flattened surface, the second layer (306, 308) is provided on the first layer.