The Dependence of Chemical Mechanical Polishing Residue Removal on Post-Cleaning Treatments

摘要

On the basis of the study briefly summarized here, we propose a BOE solution with a high HF concentration to remove the CMP induced defect from a multi-layered exposed surface. The cleaning using the solution - at the condition of same etched amount - had a good efficiency for defect removal, compared to the BOE chemical with low HF concentration. This may be because the lift-off capability using HF chemical is needed to remove the defect, and the cleaning time should be minimized to avoid the re-adsorption of lift-off defect. To understand the mechanism needs to be studied in much more detail.