SLURRY COMPOSITION OF CHEMICAL MECHANICAL POLISHING PROCESS CAPABLE OF MINIMIZING THE RE-ABSORPTION OF RESIDUE OCCURRED DURING CHEMICAL MECHANICAL POLISHING PROCESS, AND A FORMING METHOD OF A PHASE CHANGE MEMORY DEVICE USING THE SAME

摘要

PURPOSE: Slurry composition is provided to reliability of chemical mechanical polishing process including phase change material, and to control the etching rate of an etching object membrane to moderate level.;CONSTITUTION: A slurry composition of chemical mechanical polishing process comprises abrasive particles(44), and a non-ionic surfactant(46). The concentration of the non-ionic surfactant in the slurry composition is 100-300 ppb. A forming method of a phase change memory device comprises a step of forming a phase change material film on a substrate(100), and a step of chemical mechanical polishing the phase change material film by using the slurry composition.;COPYRIGHT KIPO 2012