POST-CLEANING METHOD AFTER CHEMICAL MECHANICAL POLISHING OF COPPER

摘要

A post-CMP cleaning method of copper is provided to remove effectively unwanted residues and to restrain the corrosion of a copper line by using two-step cleaning processes. A CMP process is performed on a copper line of a semiconductor wafer(S100). A first cleaning process is performed on the resultant structure(S200). The first cleaning process is performed by using an organic cleaning solution to remove copper particles from the resultant structure. A second cleaning process is then performed on the resultant structure(S300). A roll brush cleaning process is used as the second cleaning process. The roll brush cleaning process is performed by using a hydrogen reducing solution to form a minus surface charge on a wafer surface.