New FEOL Cleaning Technology for Advanced Devices beyond 45 nm Node

摘要

A dispersant agent a was applied to HCL acid-base chemicals for pre-cleaning. α controlled the surface charge negatively for both particles and substrates, and it was effective for removing SiO_2, Si_3N_4 and Al_2O_3 particles. Electrical property was tested for the flat capacitors processed with α+HCL/O_3 pre-gate cleaning. It was confirmed that degradation of gate oxide film didn't occurred when residual carbon (α) was removed from the surface by ozone water rinse. The PRE was compared with our new α+HCL/O_3 cleaning with NC2. α+HCL/O_3 cleaning had a better PRE than NC2 at high temperature without loss of oxide and silicon substrate. It was found that the dispersant agent a became the new powerful cleaning technology for advanced devices beyond 45nm node.