首页> 外文会议>International Symposium on Ultra Clean Processing of Semiconductor Surfaces;UCPSS; 20060918-20;20060918-20; Antwerp(BE);Antwerp(BE) >Ex situ bubble generation, enhancing the particle removal rate for single wafer megasonic cleaning processes
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Ex situ bubble generation, enhancing the particle removal rate for single wafer megasonic cleaning processes

机译:异位产生气泡,提高了单晶片兆声波清洗工艺的颗粒去除率

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Ex-situ generated bubbles injected in the acoustical field will enhance the particle removal efficiency. This process improvement goes along with optimization of the rotation speed (>1000RPM), the acoustic power and the frequency (1MHz>2MHz>3MHz). An alternative window of operation is the low power/low gas regime where the dwell time plays an important role.
机译:注入声场的异位产生的气泡将提高颗粒去除效率。该过程的改进伴随着转速(> 1000RPM),声功率和频率(1MHz> 2MHz> 3MHz)的优化。另一种操作窗口是低功率/低气体状态,其中停留时间起着重要作用。

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