Method for cleaning semiconductor wafer, involves introducing megasonic energy in cleaning basin which contains wafer holder for receiving semiconductor wafers, where maximum megasonic pressure on wafer holder is determined

摘要

The method involves introducing megasonic energy in a cleaning basin which contains a wafer holder for receiving semiconductor wafers. Maximum megasonic pressure on the wafer holder is determined. The additional fixtures are introduced in the cleaning basin to shield the positions of the measured megasonic maxima at the wafer holder from megasonic energy.