Critical Thickness Threshold in HfO_2 layers

机译：HfO_2层中的临界厚度阈值

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A specific chemical behavior of HfO_2 layers in the 15, 40A range currently use for CMOS applications is demonstrated. Working on this behavior can help the crystallization mechanism understanding and provide more explanation about the origin of the residues currently seen after the gate etch.

机译：展示了目前用于CMOS应用的HfO_2层在15、40A范围内的特定化学行为。研究此行为可以帮助理解结晶机理，并提供有关栅极蚀刻后当前看到的残留物来源的更多解释。

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《International Symposium on Ultra Clean Processing of Semiconductor Surfaces;UCPSS; 20060918-20;20060918-20; Antwerp(BE);Antwerp(BE)》|2006年|P.676970|共3页
会议地点 Antwerp(BE);Antwerp(BE)
作者
Pascal Besson; Virginie Loup; Thierry Salvetat; Nevine Rochat; Sandrine Lhostis; Sylvie Favier; Karen Dabertrand; Vincent Cosnier;
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作者单位

STMicroelectronics, 850 rue Jean Monnet, F-38920 Crolles, France;

CEA-DRT - LETI/DTS -17, avenue des Martyrs 38054 Grenoble CEDEX 9, France;

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原文格式 PDF
正文语种 eng
中图分类材料;
关键词
high k; HfO_2; threshold; thickness; crystallized;

机译：高k; HfO_2;阈值;厚度;结晶;

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专利

1. Critical Thickness Threshold in HfO2 layers [J] . Pascal Besson, Virginie Loup, Thierry Salvetat, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2008,第0期

机译：HfO2层的临界厚度阈值
2. Critical Thickness Threshold in Hf02 layers [J] . Pascal Besson, Virginie Loup, Thierry Salvetat, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2008,第Null期

机译：Hf02层中的临界厚度阈值
3. Effects of HfO_2 buffer layer thickness on the properties of Pt/SrBi_2Ta_1O_9/HfO_2/Si structure [J] . Ching-Chich Leu, Chen-Han Lin, Chao-Hsin Chien, Journal of Materials Research . 2008,第7期

机译：HfO_2缓冲层厚度对Pt / SrBi_2Ta_1O_9 / HfO_2 / Si结构性质的影响
4. Critical Thickness Threshold in HfO_2 layers [C] . Pascal Besson, Virginie Loup, Thierry Salvetat, International Symposium on Ultra Clean Processing of Silicon Surfaces . 2008

机译：HFO_2层中的临界厚度阈值
5. Growth and critical layer thickness determination of indium gallium nitride films grown on gallium nitride. [D] . Parker, Christopher Arlen. 2003

机译：在氮化镓上生长的氮化铟镓薄膜的生长和临界层厚度测定。
6. Exploring the Critical Thickness of Organic Semiconductor Layer for Enhanced Piezoresistive Sensitivity in Field-Effect Transistor Sensors [O] . Damien Thuau, Katherine Begley, Rishat Dilmurat, 2020

机译：探索有机半导体层的临界厚度以增强场效应晶体管传感器的压阻灵敏度
7. Critical Thickness Threshold in HfO2 layers [O] . Pascal Besson, Virginie Loup, Thierry Salvetat, 2015

机译：HfO2层中的临界厚度阈值
8. Marginal Stability and Critical Thickness of Strong Double Layers [R] . Wahlberg, C. 1980

机译：强双层边缘稳定性和临界厚度

Critical Thickness Threshold in HfO_2 layers

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