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Fabrication and Analysis of PM-biased Spin-valve Sensors

机译:永磁偏置自旋阀传感器的制作与分析

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@@ Since the pioneered work by Dieny et al. in 1991 , Spin valve has proved to be one of the best materials applied in a variety of magnetic devices, e.g. read heads due to higher sensitivity and better linearity compared to conventional Hall-effect sensing elements and anisotropic magnetoresistive (AMR) sensing elements . For read head applications, obtaining much higher-sensitive sensors is always one of the key objections to meet the requirement of continuouslyincreased areal storage densities. In order to achieve higher resolution reading, it is common to place the spin-valve sensing elements through insulator gaps between two magnetic shields, which can eliminate the external field influence on the read signal . However, the unshielded spin-valve sensing elements also show potential applications in many other areas, such as magnetic media readers (e.g. credit card readers), and filed sensors etc. Theoretically, the spin-valve devices are intrinsically linear if the hysteresis can be eliminated. How to decrease or eliminate the hysteresis of spin-valve sensor is vital to the practical applications in linear devices. As wellknown, the hysteresis of spin-valve sensing element evoked by the multi-domain structure at two ends of the free layer is the main source of the hysteresis of spin-valve sensor. In this work, we will describe the fabrication and analysis of an unshielded GMR spin-valve sensor, of which the hysteresis is suppressed by placing a pair of permanent magnets (PM) on both ends of the sensor, as shown in Figure 1. Then, the dimension dependence of the sensor performance was investigated by measuring the transfer curves of two types of GMR spin-valve sensors patterned with different lengths and widths. The results showed that with decreased length and width of the spin-valve sensor, the GMR ratio decreased and the saturation field increased respectively. However, their experimental transfer curves are both in good agreement with the theoretic simulated ones, showing high GMR ratio and little hysteresis.
机译:@@自Dieny等人的开创性工作以来。在1991年,旋转阀被证明是应用于各种磁性设备的最好的材料之一。与传统的霍尔效应感测元件和各向异性磁阻(AMR)感测元件相比,由于具有更高的灵敏度和更好的线性度,因此可以读取磁头。对于读取头应用,获得更高灵敏度的传感器始终是满足不断增加的面存储密度要求的主要目标之一。为了获得更高的分辨率读数,通常将自旋阀感应元件穿过两个磁屏蔽之间的绝缘体间隙放置,这样可以消除外部磁场对读取信号的影响。但是,非屏蔽自旋阀传感元件也显示出在许多其他领域的潜在应用,例如磁性媒体读取器(例如信用卡读取器)和磁场传感器等。从理论上讲,如果磁滞可以为零,则自旋阀装置本质上是线性的。被淘汰。如何减小或消除旋转阀传感器的滞后对于线性设备的实际应用至关重要。众所周知,在自由层的两端由多畴结构引起的自旋阀感测元件的滞后是自旋阀传感器的滞后的主要来源。在这项工作中,我们将描述非屏蔽GMR自旋阀传感器的制造和分析,该传感器的磁滞通过在传感器的两端放置一对永磁体(PM)来抑制,如图1所示。 ,通过测量两种不同长度和宽度的GMR自旋阀传感器的传递曲线,研究了传感器性能的尺寸依赖性。结果表明,随着旋转阀传感器长度和宽度的减小,GMR比减小,饱和场增大。但是,它们的实验传递曲线都与理论模拟曲线吻合良好,显示出高的GMR比和很小的磁滞。

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