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Fabrication and Analysis of PM-biased Spin-valve Sensors

机译:PM偏置旋转阀传感器的制造与分析

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@@ Since the pioneered work by Dieny et al. in 1991 , Spin valve has proved to be one of the best materials applied in a variety of magnetic devices, e.g. read heads due to higher sensitivity and better linearity compared to conventional Hall-effect sensing elements and anisotropic magnetoresistive (AMR) sensing elements . For read head applications, obtaining much higher-sensitive sensors is always one of the key objections to meet the requirement of continuouslyincreased areal storage densities. In order to achieve higher resolution reading, it is common to place the spin-valve sensing elements through insulator gaps between two magnetic shields, which can eliminate the external field influence on the read signal . However, the unshielded spin-valve sensing elements also show potential applications in many other areas, such as magnetic media readers (e.g. credit card readers), and filed sensors etc. Theoretically, the spin-valve devices are intrinsically linear if the hysteresis can be eliminated. How to decrease or eliminate the hysteresis of spin-valve sensor is vital to the practical applications in linear devices. As wellknown, the hysteresis of spin-valve sensing element evoked by the multi-domain structure at two ends of the free layer is the main source of the hysteresis of spin-valve sensor. In this work, we will describe the fabrication and analysis of an unshielded GMR spin-valve sensor, of which the hysteresis is suppressed by placing a pair of permanent magnets (PM) on both ends of the sensor, as shown in Figure 1. Then, the dimension dependence of the sensor performance was investigated by measuring the transfer curves of two types of GMR spin-valve sensors patterned with different lengths and widths. The results showed that with decreased length and width of the spin-valve sensor, the GMR ratio decreased and the saturation field increased respectively. However, their experimental transfer curves are both in good agreement with the theoretic simulated ones, showing high GMR ratio and little hysteresis.
机译:@@自Dieny等人的开创性工作。 1991年,旋转阀已被证明是在各种磁性装置中应用的最佳材料之一,例如,与传统的霍尔效应感测元件和各向异性磁阻(AMR)传感元件相比,读取头引起的敏感性较高和更好的线性。对于读取头应用,获得更高敏感的传感器总是一个关键反对意见之一,以满足不需要的面积储存密度的要求。为了实现更高的分辨率读取,通常将旋转阀传感元件通过两个磁屏蔽之间的绝缘体间隙放置,这可以消除对读信号的外部场影响。然而,非屏蔽的旋转阀传感元件还在理论上,在许多其他区域(例如磁介质读取器(例如信用卡读卡器)和提交的传感器等中示出了潜在的应用,如果滞后可以是本质上线性的旋转阀装置消除了。如何减少或消除旋转阀传感器的滞后对线性器件中的实际应用至关重要。如众所周知,自由层两端的多域结构引起的旋转阀传感元件的滞后是旋转阀传感器滞后的主要源。在这项工作中,我们将描述非屏蔽GMR旋转阀传感器的制造和分析,其中通过将一对永磁体(PM)放置在传感器的两端,如图1所示,抑制滞后,通过测量具有不同长度和宽度的两种类型的GMR旋转阀传感器的转移曲线来研究传感器性能的尺寸依赖性。结果表明,随着旋转阀传感器的长度和宽度降低,GMR比率降低,饱和场分别增加。然而,它们的实验转移曲线与理论模拟的实验曲线均吻合良好,显示出高血基比率和小滞后。

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