首页> 外文会议>International Symposium on Plasma Processing XIII, May 14-19, 2000, Toronto, Canada >GAS PHASE ANALYSIS OF TiC AND TiN PLASMA ENHANCED CVD PROCESSES BY MOLECULAR BEAM MASS SPECTROMETRY
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GAS PHASE ANALYSIS OF TiC AND TiN PLASMA ENHANCED CVD PROCESSES BY MOLECULAR BEAM MASS SPECTROMETRY

机译:分子束质谱法分析TiC和TiN等离子增强CVD工艺的气相

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Molecular beam mass spectrometry (MBMS) has been used to analyze the gas phase of Ar and Ar+TiCl_4 plasmas. The gas phase composition was analyzed as a function of pressure and plasma power. The results show that an increase in plasma power increases the concentration of dissociated and ionized species in the plasma phase. Higher plasma power increased the intensity of ions from TiCl_4 and Ar up until 100 W and then ion intensity reached a plateau value with increasing rf power. The Ar ion intensity increases with total reactor pressure up to 200 mTorr and then ion intensity was found to decrease with pressure. Ion energy distribution studies attempted showed that there exist a ion energy range for each individual ions.
机译:分子束质谱(MBMS)已用于分析Ar和Ar + TiCl_4等离子体的气相。分析气相组成作为压力和等离子体功率的函数。结果表明,等离子体功率的增加会增加等离子体相中离解和离子化物质的浓度。更高的等离子体功率将TiCl_4和Ar中的离子强度提高到100 W,然后随着rf功率的增加离子强度达到平稳值。 Ar离子强度随总反应器压力升高至200 mTorr而增加,然后发现离子强度随压力而降低。尝试进行的离子能分布研究表明,每个单独的离子都有一个离子能范围。

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