首页> 外文会议>International symposium on electronic packaging technology;ISEPT; 19961209-12;19961209-12; Shanghai(CN);Shanghai(CN) >Corrosion Failure and its Countermeasure of Kovar Leads in Microelectronic Packages
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Corrosion Failure and its Countermeasure of Kovar Leads in Microelectronic Packages

机译:微电子封装中可伐铅的腐蚀失效及其对策

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摘要

In this paper the corrosion failure mechanism of Kovar leads in microelectronic packages is discussed. It is believed that the anodic dissolution and the cathodic hydrogen evolution which occur at the occluded zone in gold plating defects must be responsible for the corrosion failure. Improving sealing quality at lead-to-glass interface, eliminating chloride ions technology and choosing nickel plating with low stress etc are proposed to reduce the corrosion failure of leads in microelectronic packages.
机译:本文讨论了微电子封装中可伐合金引线的腐蚀破坏机理。据认为,发生在金镀层缺陷的封闭区域中的阳极溶解和阴极氢的释放必须是腐蚀失败的原因。为了减少微电子封装中引线的腐蚀失效,提出了提高引线与玻璃之间的密封质量,消除氯离子技术以及选择低应力镀镍等建议。

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