Characteristics of SnO_x-Coated Lithium Manganese Oxide Thin film for MEMS Power System

摘要

We prepared spinel-phase LiMn_2O_4 layer by using rf magnetron sputtering system. LiMn_2O_4 films were deposited at room temperature and then annealed at 750℃ for crystallization to spinel type. In order to reduce the interface reaction such as Mn dissolution phenomenon during operation, we introduced SnO_x (coating-layer) thin film. The SnO_x films were deposited on LiMn_2O_4 films by rf magnetron sputtering system. A SnO_x-coated LiMn_2O_4 film was more stable during the charging-discharging reaction and maintained good cycle behavior at high temperature conditions of 55℃.