Latest Technology PT IGBTs vs. Power MOSFETs

摘要

With recent reductions in both conduction and switching losses, PT IGBTs now have superior performance over MOSFETs rated from 200 to 300 Volts. This paper compares the overall performance of these 300 Volt IGBTs with 300 Volt power MOSFETs. On-state voltage is greatly reduced due to conductivity modulation in the IGBT, yet total switching losses are almost identical to that of MOSFETs. Due to active minority carrier lifetime control, these PT IGBTs are suitable for high frequency power supply applications. Tests in a hard-switched circuit show that the 300 Volt IGBTs provide a lower cost, higher performance alternative to power MOSFETs.