首页> 外文会议>International Conference on Thin Film Physics and Applications; 20070925-28; Shanghai(CN) >Highly (h00) oriented growth of SrTiO_3 thin films on Si(100) substrates by RF magnetron sputtering and their optical properties
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Highly (h00) oriented growth of SrTiO_3 thin films on Si(100) substrates by RF magnetron sputtering and their optical properties

机译:射频磁控溅射在Si(100)衬底上高(h00)取向生长SrTiO_3薄膜及其光学特性

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SrTiO_3 (STO) thin films were grown on Si(100) substrates by RF magnetron sputtering. The substrate temperature was found to be a crucial parameter to obtain the highly (h00) oriented growth. At the substrate temperature of 700 ℃, STO thin films with the (h00)-orientation parameter (α_(h00)) of more than 93% were realized. Using vitreous silica as the substrate, the optical properties of STO thin film prepared at 700 ℃ were investigated by transmittance measurements. The fitting method was used to calculate the refractive index and the film thickness from the transparent region of the transmittance spectra. The dispersion of the refractive index was studied by considering a single electronic oscillator model. According to Tauc's law, the band gap of the film was found to be about 3.62 eV.
机译:SrTiO_3(STO)薄膜通过射频磁控溅射在Si(100)衬底上生长。发现衬底温度是获得高度(h00)定向生长的关键参数。在700℃的衬底温度下,实现了(h00)取向参数(α_(h00))大于93%的STO薄膜。以石英玻璃为基底,通过透射率测量研究了700℃下制备的STO薄膜的光学性能。使用拟合方法从透射光谱的透明区域计算折射率和膜厚度。通过考虑单个电子振荡器模型研究了折射率的色散。根据Tauc定律,发现该膜的带隙为约3.62eV。

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