Electromagnetic simulation on high-frequency solenoid inductors formed by focused-ion-beam stress-introducing technique

摘要

This paper reports the electromagnetic simulation on solenoid-structure inductors for high frequency applications. The components are achieved by the focused-ion-beam stress-introducing technique. The influence of various structure parameters such as the pitch, diameter, number of turns have been analyzed in detail using the Ansoft HFSS simulator. For the inductor with a diameter of about one hundred microns, a wide operation frequency range as well as a maximum quality factor (Q) of 114 can be obtained. For the inductor with a diameter of several hundred nanometers, a maximum Q of more than 7 at THz is predicted.