On-chip embedded toroidal solenoid inductors and transformers formed by post-CMOS micromachining techniques

摘要

This paper presents a micromachined implementation of embedded toroidal solenoids for high-performance on-chip inductors and transformers, which is highly demanded in radio-frequency integrated circuits (RFICs). Microfabricated on CMOS compatible silicon wafers with post-CMOS micromachining techniques, the RF toroidal components can constrain the magnetic flux into a well-defined path and away from other on-chip RF devices, thereby, being in favor of decrease in RF loss, increase in Q-factor and elimination of electromagnetic interference. By using a technical combination of an anisotropic wet etch and an isotropic dry etc., the micromachined toroidal structure can be used for the formation of metal solenoid by copper electroplating. Processed under low temperature (Max 120 ℃ for photoresist hard-baking), the three mask microfabrication can be compatible with CMOS IC fabrication in a post-process way. The formed toroidal inductors with 4.92 nH and 8.48 nH inductance are tested, and we obtain maximum Q-factors of 25.7 and 17.8 at 3.6 GHz and 3.1 GHz, while the self-resonant frequencies are 17.3 GHz and 7.4 GHz, respectively. On the other hand, two types of toroidal transformers are also formed and tested, resulting in satisfactory RF-performance. Therefore, the novel techniques for close-loop solenoid inductors are promising for high-performance RF ICs.