Temperature Impact on the Lorentzian Noise Induced by Electron Valence Band Tunneling in Partially Depleted SOI nMOSFETs

摘要

In this paper, the temperature impact on the Lorentzian noise induced by electron valence band tunneling (EVB) is analyzed for partially depleted SOI MOSFETs. In [1,2] the Lorentzian noise parameters were already studied at 300K and a model based on shot noise of the EVB tunneling current was proposed. The aim of this paper is to investigate the Lorentzian time constant τ and the plateau amplitude of the gate voltage noise spectral density S_(V_G) (0) variation versus temperature, where S_(V_G) (0) = S_I(0)/(gm)~2. It is observed that from 300K down to 80K τ and S_(V_G) (0) exhibit behaviors in agreement with the existing model [1,2].