HOT CARRIER RELIABILITY CONSIDERATIONS FOR LOW VDD CMOS TECHNOLOGY

摘要

Hot carrier reliability for low Vdd technology and circuit operation was investigated. It is found that a degraded NMOSFET has larger Id degradation at lower Vdd operation. Moreover, I/O circuits at low Vdd have more stringent requirement for hot carrier reliability. CMOS input threshold voltage is increased after either N or P MOSFET degradation as is the output low voltage.