Liquid-phase epitaxial growth and characterization of In(SbBi)

摘要

Abstract: The growth of In(Bi,Sb) epilayers using liquid phase epitaxy has been discussed. The layers were grown on a (111)B side of InSb substrate using Bi-rich solution in horizontal slider type boat. The growth conditions for high-quality planar epitaxial layers were determined. Mirrorlike surface morphology was observed using a Nomarski differential interference contrast microscope. Hall and resistivity measurements performed at 300 K and 77 K showed an impurity contamination of the epitaxial layers. A capacitance-voltage technique has been established to determine the distribution of doping levels on the surface of InBiSb epilayers. The results indicate that the epitaxial layers of In(Sb,Bi) are n-type at room temperature, however, the time of baking solutions (before crystallization) determined type of conductivity and the concentration of free carriers in epilayers, at 77 K. For short-time-baked solution (from 5 to 20 hours), samples were p-type (carrier concentration approximately 3$DOT@10$+15$/ cm$+$MIN@3$/) when for long- time-baked solutions (40 - 100 hours), samples were n-type (carrier concentration approximately 5$DOT@10$+15$/ cm$+$MIN@3$/). We have observed that type of conductivity depends on surface morphology of the epilayers. The type of doping and the segregation coefficient k for tin for different solutions were established. For In rich solutions tin was an acceptor with k $EQ 0.0012 and for Bi-rich ones tin was a donor with k $EQ 0.0039 at 400$DGR@C.!12