Temperature stability of p-n CdxHg1-xTe structures formed by ion beam milling

摘要

Abstract: The influence of thermal annealing on electrical properties of p-n structures formed by ion beam milling (IBM) on vacancy doped Cd$-x$/Hg$-1$MIN@x$/Te (x $EQ 0.205) single crystals with p (77 K) $EQ 5.8$DOT@10$+15$/ cm$+$MIN@3$/ was investigated. After IBM of the initial samples the n-type layers were created with the thickness about 10 $mu and electron concentration of the main part of n-type layers 5$DOT@10$+14$/ cm$+$MIN@3$/. P-n structures were annealed in air at 85, 120 and 160$DGR@C during 1, 2, and 4 hours. Degradation of the p-n structure after every annealing step was estimated on changes of the Hall coefficient dependence of magnetic field. It was revealed that degradation of the p-n structure took place due to progressive thickness decreasing of n-layer through Hg passing to intersites and vacancy creation. The critical temperature during technology steps is equal about 100$DGR@C.!8