Phosphorus Ion Implantation into 4H-SiC (0001) and (1120)

摘要

High-dose ion implantation of phosphorus into 4H-SiC has been investigated. Phosphorus-ion implantation with a 1 x 10~(16) cm~9-2) dose at 800℃ into 4H-SiC (0001) has resulted in a sheet resistance of 80 Ω/□ after annealing at 1700℃. A similar sheet resistance of 110 Ω/□ was achieved even by room-temperature implantation when 4H-SiC (1120) was employed, owing to excellent recrystallization of this face. The sheet resistance could be further reduced down to 27 Ω/□ by 800℃-implantation into 4H-SiC (1120) followed by annealing at 1700℃. In the case of 800℃-implantation into 4H-SiC (1120), a low sheet resistance of 110 Ω/□ was obtained even by 1300℃-annealing. 4H-SiC (1120) showed a very flat surface after annealing.