Radiation Response of p-Channel 6H-SiC MOSFETs Fabricated Using Pyrogenic Conditions

机译：使用热解条件制造的p沟道6H-SiC MOSFET的辐射响应

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We present the first observation of total dose effects of gamma-ray irradiation on 6H-SiC p-channel MOSFETs. The transistors were irradiated using a ~(60)Co source to very high total dose levels. The electrical active defects created by irradiation change the components response.

机译：我们目前对6H-SiC p沟道MOSFET的伽马射线辐照的总剂量效应进行了首次观察。使用〜（60）Co光源将晶体管辐照至非常高的总剂量水平。辐照产生的电活性缺陷会改变组件的响应。

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来源
《International Conference on Silicon Carbide and Related Materials 2001 Pt.2 Oct 28-Nov 2, 2001 Tsukuba, Japan》|2001年|p.1097-1100|共4页
会议地点 Tsukuba(JP);Tsukuba(JP)
作者
Kin Kiong Lee; Takeshi Ohshima; Hisayoshi Itoh;
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作者单位

Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
gamma-ray irradiation; interface traps; oxide charge traps;

机译：γ射线辐照；界面陷阱；氧化物电荷陷阱;

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专利

1. Dose response, radiation sensitivity and signal fading of p-channel MOSFETs (RADFETs) irradiated up to 50 Gy with Co-60 [J] . Pejovic Milic M. Applied radiation and isotopes: including data, instrumentation and methods for use in agriculture, industry and medicine . 2015,第Null期

机译：剂量响应，P沟道MOSFET（RadFET）的辐射灵敏度和信号衰落，用CO-60照射高达50 GY
2. Dose response, radiation sensitivity and signal fading of p-channel MOSFETs (RADFETs) irradiated up to 50 Gy with Co-60 [J] . Pejovic Milic M. Applied radiation and isotopes: including data, instrumentation and methods for use in agriculture, industry and medicine . 2015,第Null期

机译：剂量响应，P沟道MOSFET（RadFET）的辐射灵敏度和信号衰落，用CO-60照射高达50 GY
3. Improvement of radiation response of SiC MOSFETs under high temperature and humidity conditions [J] . Takeyama Akinori, Matsuda Takuma, Yokoseki Takashi, Japanese journal of applied physics . 2016,第10期

机译：改善高温高湿条件下SiC MOSFET的辐射响应
4. Electrical Properties of p-channel MOSFETs Fabricated on 4H- and 6H-SiC [C] . Mitsuo Okamoto, Mieko Tanaka, Tsutomu Yatsuo, European Conference on Silicon Carbide and Related Materials . 2007

机译：4H-和6H-SIC制造的P沟道MOSFET的电气性能
5. A study on the optimization of the recessed silicon germanium junction parameters of p-channel MOSFETs with channels under uniaxial compressive strain. [D] . Chopra, Saurabh. 2007

机译：单通道压缩应变下具有沟道的p沟道MOSFET的凹陷硅锗结参数优化研究。
6. Radiation Response of Negative Gate Biased SiC MOSFETs [O] . Akinori Takeyama, Takahiro Makino, Shuichi Okubo, 2019

机译：负栅偏置SiC MOSFET的辐射响应
7. P-Channel MOSFETs on 4H-SiC {0001} and Nonbasal Faces Fabricated by Oxide Deposition and N2O Annealing [O] . Noborio Masato, Suda Jun, Kimoto Tsunenobu 2009

机译：通过氧化沉积和N2O退火制造的4H-SiC {0001}和非基面上的P沟道MOSFET

Radiation Response of p-Channel 6H-SiC MOSFETs Fabricated Using Pyrogenic Conditions

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