Development of 600 V / 8 A SiC Schottky Diodes with Epitaxial Edge Termination

摘要

We have developed a SiC Schottky Diode process using epitaxial edge termination. This process involves SiC dry etching with vertical slope, to define so-called Mesa structures. Devices use a silicon dioxide primary passivation, and polyimide material secondary passivation. The Schottky diodes combine high on-current (If = 8A @ 1.5V), high reverse blocage (Vr > 600V), and good reliability. The process has demonstrated potential for high yield, and offers several advantages for the manufacturing of SiC Schottky diodes.