The Development of Ultra-High Frequency Power 6H-SiC Vertical Static Induction Transistor with p-n Junction as a Gate

摘要

A new vertical channel silicon carbide static induction transistor (SIT) with p-n junction as a gate has been fabricated using epitaxial and implantation techniques. The I-V characteristics of these SIT's showed the presence of a linear and anomalous avalanche breakdown regions. In this work it is shown that the latter is caused by electrical domain, which is mobile and it is due to the Bloch oscillations regime, conditioned by a strong field minizone transport in 6H-SiC natural superlattice. This is a radically new state for the electron silicon carbide but can be easily realised in devices when the electrical field is parallel to the c-axis and equal to 150kV/cm. This domain is similar to the Gunn domain and has to oscillate with the frequency controlled by reverse transit flight time of electrons through the SIT channel.