Development of innovative “dilatancy pad” realizing super high efficiency and high-grade polishing of SiC wide band Gap semiconductor substrates

摘要

In this study, we perform the collaborative research and development with various specialized companies such as machine/system, polishing pad and abrasive/slurry. We aim at the establishment of the high efficiency and high-grade polishing of hard-to-process semiconductor substrates in particular with SiC and GaN. We propose and devise an innovative polishing pad as a part of the fusion processing establishment. The unprecedented innovative special polishing pad (dilatancy pad) can realize removal rates more than 2.5 ~ 10 times in comparison with a conventional metal plate. And, the occurrence frequency of the processing damage (scratches, outbreak depth of polishing damaged layers) can be improved drastically in comparison with conventional method. In the middle polishing process, we have figured out to lighten the load from the final polishing by reducing generation of polishing damage using our new method instead of the conventional one. As a result, we have realized the super high efficiency and high-grade polishing of the hard-to-process semiconductor substrates.