首页> 外文会议>International Conference on Nitride Semiconductors(ICNS-5); 20030525-20030530; Nara; JP >High electron concentrations in Si-doped AlN/AlGaN superlattices with high average Al content of 80
【24h】

High electron concentrations in Si-doped AlN/AlGaN superlattices with high average Al content of 80

机译:硅掺杂的AlN / AlGaN超晶格中的高电子浓度,平均Al含量高达80%

获取原文
获取原文并翻译 | 示例

摘要

Uniformly Si-doped A1N/Al_(0.5)Ga_(0.5)N superlattices were shown to have a high electron concentration. Even with high average Al content of approximately 80%, the high electron concentration reached 3.2 x 10~(18) cm~(-3), which is about eight times higher than that of a bulk Si-doped AlGaN layer with the same Al content. In the AlN/AlGaN system, the conduction band offset is larger than the ionization energy of the Si donor in A1N. Therefore, the Si donors in the A1N barriers are fully activated and the corresponding electrons are transferred to the AlGaN wells. In addtion, the large band bending caused by the strong strain-induced piezoelectric and spontaneous polarization increases the activation of the donors in the AlGaN wells.
机译:均匀掺杂Si的AlN / Al_(0.5)Ga_(0.5)N超晶格显示具有高电子浓度。即使具有约80%的高平均Al含量,高电子浓度也达到3.2 x 10〜(18)cm〜(-3),这是具有相同Al的体硅掺杂AlGaN层的高电子浓度约八倍。内容。在AlN / AlGaN系统中,导带偏移大于AlN中Si施主的电离能。因此,AlN势垒中的Si施主被完全激活,相应的电子被转移到AlGaN阱中。此外,由强应变感应的压电和自发极化引起的大带弯曲会增加AlGaN阱中施主的活化。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号