Penetration of quantum-mechanical current density under semi-infinite rectangular potential barrier as the consequence of the interference of the electron waves in semiconductor 2D nanostructures

摘要

In the present work, theoretical investigation of the influence of the electron interference effects on the inhomogeneous spatial distribution of the probability current density j_x (x, z) (or a quantum-mechanical current density ej_x (x, z), e is the electron charge) for the electron waves spreading along the x-axis in a semiconductor 2D nanostructures certain type is continued. We theoretically investigated behaviour of the ej_x (x, z) at falling of the electron wave on rectangular semi-infinite potential barrier (a potential wall) in height V_0 in semiconductor 2D nanostructure providing existence of the interference effects. We have considered a situation when in the 2D nanostructure, consisting in the direction of propagation of the electron wave two rectangular quantum wells (QW_s) of different width, at the left, from QW_1 the electronic wave of unit amplitude with energy E_x < V_0 on such barrier in QW_2 falls. We have shown, that in such structures the situation when under a barrier the quantum-mechanical current density ej_x (x, z) ≠ 0 and its amplitude exponentially dumped at x → ∞ is possible.