Under-Barrier Leakage of the Quantum-Mechanical Current Density Owing to the Interference of Electron Waves in the 2D Semiconductor Nanostructures

摘要

The theoretical analysis of the under-barrier leakage of the local quantum-mechanical current density in the 2D semiconductor nanostructures that represent narrow and wide rectangular quantum wells sequentially located along the propagation direction of electron wave is presented. The wave arrives from the narrow quantum well at a semi-infinite rectangular potential barrier with height V{) in the wide quantum well. Under certain conditions, the exponentially decaying and coordinate-dependent leakage of the local quantum-mechanical current density under barrier is allowed for the waves with energies of less than V() due to the interference of electron waves in such a nanostructure.