PHOTOELECTRIC CONVERSION LOSSES IN GAAS AND GAP SCHOTTKY DIODES

摘要

An experimental and theoretical study of GaAs and GaP Schottky diodes quantum efficiency is reported. The quantum efficiency is found to increase strongly with temperature and electric field in the SCR and tends towards saturation at high temperatures and electric fields. We believe that it is an evidence of high concentration of imperfections in the SCR, which acts as traps and captures both photoelectrons and photoholes and propose the model involving fluctuation traps in SCR. Also, we propose a new mechanism for lowering the short-wavelength quantum efficiency of the photoelectric conversion process in GaAs and GaP Schottky diodes - the hot exciton mechanism, based on peculiarities of the band structures of the GaAs and GaP.