MAGNETOSPECTROSCOPY OF Zn-DOPED InP TO 30 T

机译：掺锌InP至30 T的磁谱

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Zn-doped p-type InP has been examined by far-infrared absorption magnetospectroscopy to fields much higher than previously. The impurity-related transitions observed confirm and greatly extend previous data and reveal new phenomena.

机译：Zn掺杂的p型InP已通过远红外吸收光谱法检查到比以前更高的场。观察到的与杂质有关的转变证实并大大扩展了先前的数据并揭示了新现象。

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来源
《International Conference on High Magnetic Fields in Semiconductor Physics; 20040802-06; Tallahassee,FL(US)》|2004年|P.391-394|共4页
会议地点 TallahasseeFL(US)
作者
R. A. LEWIS; Y.-J. WANG;
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作者单位

Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong NSW 2522, Australia;

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会议组织
原文格式 PDF
正文语种 eng
中图分类半导体技术;
关键词
magnetospectroscopy; InP; Zn; acceptor; far-infrared absorption; THz;

机译：磁波谱; InP; Zn;受体;远红外吸收; THz;

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1. Magnetospectroscopy of Zn-doped InP to 30 T [J] . Lewis RA, Wang YJ International Journal of Modern Physics, B. Condensed Matter Physics, Statistical Physics, Applied Physics . 2004,第27a29期

机译：Zn掺杂InP至30 T的磁谱
2. Second-Harmonic Generation of Subterahertz Gyrotron Radiation by Frequency Doubling in InP:Fe and Its Application for Magnetospectroscopy of Semiconductor Structures [J] . Rumyantsev V. V., Maremyanin K. V., Fokin A. P., Semiconductors . 2019,第9期

机译：INP中频率加倍的次谐波辐射的二次谐波产生辐射及其在半导体结构磁带切术中的应用及应用
3. Characteristics of InP on GaAs substrate using Zn-doped Al(Ga) InAs metamorphic buffers [J] . Yang He, Yurun Sun, Yongming Zhao, Journal of materials science . 2017,第13期

机译：掺杂锌的Al（Ga）InAs变质缓冲剂在GaAs衬底上InP的特性
4. MAGNETOSPECTROSCOPY OF Zn-DOPED InP TO 30 T [C] . R. A. LEWIS, Y.-J. WANG International Conference on High Magnetic Fields in Semiconductor Physics . 2005

机译：Zn-掺杂的INP磁选切至30吨
5. Simulation and Comparison of High Speed GaAsSb-InP and InGaAs-InP Uni-Traveling-Carrier Photodiodes [D] . Guneroglu, Ugur 2019

机译：高速GaAsSb-InP和InGaAs-InP单向载流子光电二极管的仿真与比较
6. Raman Spectroscopic Characterizations of Self-Catalyzed InP/InAs/InP One-Dimensional Nanostructures on InP(111)B Substrate using a Simple Substrate-Tilting Method [O] . Jeung Hun Park, Choong-Heui Chung 2019

机译：使用简单的基板倾斜方法在InP（111）B基板上自催化InP / InAs / InP一维纳米结构的拉曼光谱表征
7. Structure of the [ZnIn-VP] defect complex in Zn-doped InP [O] . Castleton, CWM, Mirbt, S 2003

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8. A comparative study of performance parameters of n()-p InP solar cells made by closed-ampoule sulfur diffusion into Cd- and Zn-doped p-type InP substrates [R] . Faur, Mircea, Faur, Maria, Goradia, Chandra, 1991

机译：n - ） - p Inp太阳能电池性能参数的比较研究 - 封闭安瓿硫扩散到Cd和Zn掺杂的p型Inp衬底中

MAGNETOSPECTROSCOPY OF Zn-DOPED InP TO 30 T

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