14.86 SILICON THIN FILM SOLAR CELLS PREPARED BY RTCVD

摘要

The thin film polycrystalline silicon solar cells were fabricated by RTCVD technique, with a growth rate 1.7um/min at the P~(++) substrate witch temperature is above 1130℃. The best conversion efficiency was 14.86% with V_(oc)=626.4mV, I_(sc)=33. 2mA, F.F.=0.7788 and area=1.09cm~2(AM1.5, 25 ℃), this paper also reports the improvements of the fabricating technology.