Amorphous Si_(1-x)C_x:H films prepared by hot-wire CVD using SiH_3CH_3 and SiH_4 mixture gas and its application to window layer for silicon thin film solar cells

摘要

B-doped hydrogenated amorphous silicon carbon (a-Si_(1-x)C_x:H) films have been prepared by hot-wire CVD (HWCVD) using SiH_3CH_3 as the carbon source gas. The optical bandgap energy and dark conductivity of the film are about 1.94 e Vand 2 × 10~(-9) S/cm, respectively. Using this film as a window layer, we have demonstrated the fabrication of solar cells having a structure of the textured SnO_2(Asahi-U)/a-Si_(1-x)C_x:H(p)/a-Si_(1-x)C_x: H(buffer)/a-Si:H(i)/μc-Si:H(n)/Al. The conversion efficiency of the cell is found to be 7.0%.