Iridium Diffusion into Silicon Wafers as a Means to Determine Silicon Vacancy Concentrations

摘要

Diffusion of Ir into Si was investigated in the temperature range from 875 to 1050℃ by means of neutron activation analysis and mechanical sectioning. Within the framework of interstitial-substitutional diffusion, previously established for Ir in Si, the measured penetration profiles were simulated by the simultaneous action of the kick-out and dissociative mechanism. This enabled us not only to determine the thermodynamic and transport properties of Ir in Si but also to assess Si vacancy concentrations in thermal equilibrium.