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Research on Chemical Mechanical Polishing for Silicon Nitride Ceramics

机译:氮化硅陶瓷化学机械抛光的研究

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摘要

Silicon nitride ceramics materials have excellent properties such as small density, high rigidity, high Young's modulus, high wearability, good thermal stability and chemical stability, which make it become one of the most appropriate materials for rollers of high precision bearing. Chemical Mechanical Polishing (CMP) technology is employed to have an ultra-precision machining process for silicon nitride ceramics materials workpiece and the effects of workpiece surface roughness in different abrasive are discussed in this research. The XRD and SEM technology are used to take phase analysis and surface profile detection for the finishing workpiece polished with CeO_2 abrasive. The chemical reaction mechanism and the material remove mechanism of silicon nitride ceramics materials in CMP process with CeO_2 abrasive are both analysed and discussed in this paper. The research result shows that an extremely smooth surface of silicon nitride ceramics materials workpiece with roughness 5nm Ra is obtained after CMP process with polyurethane polishing pad and CeO_2 abrasive.
机译:氮化硅陶瓷材料具有优异的性能,例如密度小,刚性高,杨氏模量高,耐磨性高,热稳定性和化学稳定性好,使其成为最适合用于高精度轴承滚子的材料之一。利用化学机械抛光(CMP)技术对氮化硅陶瓷材料工件进行超精密加工,探讨了工件表面粗糙度对不同磨料的影响。 XRD和SEM技术用于对用CeO_2磨料抛光的精加工工件进行相分析和表面轮廓检测。分析并讨论了CeO_2磨料在CMP工艺中氮化硅陶瓷材料的化学反应机理和材料去除机理。研究结果表明,采用聚氨酯抛光垫和CeO_2磨料进行CMP处理后,可获得粗糙度为5nm Ra的氮化硅陶瓷材料工件表面非常光滑。

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