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DEFECTIVITY IN CHEMICAL MECHANICAL PLANARIZATION: A MULTISCALE APPROACH

机译:化学机械平面化中的缺陷:一种多尺度方法

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摘要

A multi-scale model encompassing pad response and slurry evolution is developed to predict scratch propensity in a CMP process. The pad response delineates the interplay between the local particle level deformation and the cell level bending of the pad. The slurry evolves in the diffusion limited agglomeration (DLA) or reaction limited agglomeration (RLA) regime. Various nano-scale slurry properties significantly influence the spatial and temporal modulation of the material removal rate (MRR) and scratch generation characteristics. The model predictions are first validated against experimental observations. A parametric study is then undertaken. Such physically based models can be utilized to optimize slurry and pad designs to control the depth of generated scratches as well as their frequency per unit area.
机译:建立了包含垫响应和浆料演变的多尺度模型,以预测CMP工艺中的划痕倾向。垫响应描绘了垫的局部颗粒水平变形与单元水平弯曲之间的相互作用。浆料以扩散受限的团聚(DLA)或反应受限的团聚(RLA)方式发展。各种纳米级浆料特性会显着影响材料去除率(MRR)和划痕生成特性的时空调制。首先根据实验观察结果验证模型预测。然后进行参数研究。这种基于物理的模型可用于优化浆液和垫的设计,以控制产生的划痕的深度及其单位面积的频率。

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