Electroluminescence from ZnO~+-Si Heterojunction

摘要

The ZnO~+-Si heterojunction has been fabricated via depositing nominally undoped ZnO film by reactive sputtering on a heavily arsenic-doped (n~+) silicon substrate. The sputtered ZnO film was n-type in conductivity with an electron concentration of 1.0 × 10~(18) cm~(-3). The current-voltage characteristics indicate that the ZnO~+-Si heterojunction does not possess rectifying function. Under the forward bias with the negative voltage applied on the n~+-Si substrate, the heterojunction emits ultraviolet and broad visible lights characteristics of near-band-edge and defect-related emissions of ZnO, respectively. The EL mechanism has been tentatively explained in terms of the energy-band diagram.